2SA1015-O(T)

更新时间： 2024-02-20 07:56:04

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体放大器小信号双极晶体管驱动
页数	文件大小	规格书
3页	111K
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2SA1015-O(T) 数据手册

2SA1015(L)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1015(L)

Audio Frequency Amplifier Applications

Unit: mm

Low Noise Amplifier Applications

High voltage and high current: V

= −50 V (min),

CEO

= −150 mA (max)

Excellent h

linearity: h

: h

(2) = 80 (typ.) at V = −6 V, I = −150 mA

(I = −0.1 mA)/h

Low noise: NF = 0.2dB (typ.) (f = 1 kHz)

CE C

(I = −2 mA) = 0.95 (typ.)

Complementary to 2SC1815 (L)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

-50

CBO

CEO

EBO

-5

-150

-50

°C

JEDEC

JEITA

TO-92

SC-43

2-5F1B

Base current

Collector power dissipation

Junction temperature

Storage temperature range

400

TOSHIBA

125

-55~125

Weight: 0.21 g (typ.)

stg

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

= -50 V, I = 0

-0.1

CBO

= -5 V, I = 0

EBO

FE (1)

= -6 V, I = -2 mA

400

DC current gain

(Note)

= -6 V, I = -150 mA

-0.1

-0.3

-1.1

FE (2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

= -100 mA, I = -10 mA

CE (sat)

= -100 mA, I = -10 mA

BE (sat)

= -10 V, I = -1 mA

MHz

= -10 V, I = 0

Collector output capacitance

Base intrinsic resistance

f = 1 MHz

= -10 V, I = 1 mA

bb’

0.5

0.2

f = 30 MHz

= -6 V, I = -0.1 mA

NF (1)

NF (2)

f = 100 Hz, R = 10 kW

Noise figure

= -6 V, I = -0.1 mA

f = 1 kHz, R = 10 kW

Note: h

classification O: 70~140, Y: 120~240, GR: 200~400

FE (1)

2003-03-27

12 3

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