Datasheet > 2SA1015-O_11

2SA1015-O_11

更新时间： 2024-11-13 07:29:27

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
3页	380K
描述
PNP Silicon Plastic-Encapsulate Transistor

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中文翻译

获取价格

数据手册

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2SA1015-O_11 数据手册

2SA1015-O

2SA1015-Y

2SA1015-GR

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Capable of 0.4Watts of Power Dissipation.

PNP Silicon

Plastic-Encapsulate

Transistor

Collector-current 0.15A

Collector-base Voltage 50V

Operating and storage junction temperature range: -55^OC to +125^OC

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking:A1015

•

Lead Free Finish/Rohs Compliant ("P"Suffix designates

Compliant. See ordering information)

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage

---

Vdc

(I =0.1mAdc, I_B=0)

V_(BR)CBO

Collector-Base Breakdown Voltage

(I =100uAdc, I_E=0)

Collector Cutoff Current

(V_CB=50Vdc, I_E=0)

Emitter Cutoff Current

(V_EB=5.0Vdc, I_C=0)

0.1

uAdc

CBO

I_EBO

ON CHARACTERISTICS

h_FE

DC Current Gain

---

400

0.3

1.1

---

(I =2.0mAdc, V_CE=6.0Vdc)

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

(I =100mAdc, I =10mAdc)

Vdc

Base-Emitter Saturation Voltage

(I =100mAdc, I =10mAdc)

SMALL-SIGNAL CHARACTERISTICS

f_T

Transistor Frequency

---

(I_C=1.0mAdc, V_CE=10Vdc, f=30MHz)

MHz

DIMENSIONS

INCHES

DIM

MIN

.170

.550

.010

.130

.096

MAX

.190

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

FE (1)

CLASSIFICATION OF H

Rank

Range

70-140

200-400

.190

.590

.020

.160

.104

120-240

www.mccsemi.com

1 of 3

Revision: C

2011/03/25

12 3

中文翻译

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