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2N7002_08 PDF预览

2N7002_08

更新时间: 2024-11-21 07:29:15
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 晶体晶体管
页数 文件大小 规格书
4页 216K
描述
Small Signal MOSFET Transistor

2N7002_08 数据手册

 浏览型号2N7002_08的Datasheet PDF文件第2页浏览型号2N7002_08的Datasheet PDF文件第3页浏览型号2N7002_08的Datasheet PDF文件第4页 
BL Galaxy Electrical  
Production specification  
Small Signal MOSFET Transistor  
2N7002  
FEATURES  
z
High Density Cell Design For Low  
RDS(ON)  
Pb  
z
z
z
Voltage Controlled Small Switch.  
Rugged and Reliable.  
Lead-free  
High Saturation Current Capability.  
APPLICATIONS  
z
N-channel enhancement mode effect transistor.  
z
Switching application.  
SOT-23  
ORDERING INFORMATION  
Type No.  
2N7002  
Marking  
3P  
Package Code  
SOT-23  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
VDSS  
Drain-Source voltage  
Drain-Gate voltage(RGS1M)  
60  
60  
V
V
VDGR  
Gate -Source voltage  
- continuous  
±20  
±40  
115  
VGSS  
ID  
V
-Non Repetitive (tp<50μs)  
Maximum Drain current  
Power Dissipation  
-continuous  
-Pulsed  
mA  
800  
PD  
200  
625  
mW  
RθJA  
Thermal resistance,Junction-to-Ambient  
Junction and Storage Temperature  
/W  
TJ, Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Document number: BL/SSMTC008  
Rev.A  
www.galaxycn.com  
1

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