生命周期: | Active | 包装说明: | PLASTIC PACKAGE-3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.82 |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 0.115 A | 最大漏极电流 (ID): | 0.115 A |
最大漏源导通电阻: | 7.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 5 pF | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7002-13-F | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Met | |
2N7002-215 | NXP |
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60 V, 300 mA N-channel Trench MOSFET | |
2N7002-7 | DIODES |
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N-CHANNEL ENHANCEMENT MODE MOSFET | |
2N7002-7-F | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
2N7002-7-F | TI |
获取价格 |
bq2026 Evaluation Software | |
2N7002-7-F | INTERSIL |
获取价格 |
ISL8225MEVAL2Z 6-Phase, 90A Evaluation Board Setup Procedure | |
2N7002A | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
2N7002A | KEC |
获取价格 |
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
2N7002A | FAIRCHILD |
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N-Channel Enhancement Mode Field Effect Transistor | |
2N7002A | MCC |
获取价格 |
Tape: 3K/Reel, 120K/Ctn.; |