Datasheet > 2N7002A_09

2N7002A_09

更新时间： 2022-09-16 16:04:46

品牌	Logo	应用领域
KEC		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	54K
描述
FIELD EFFECT TRANSISTOR

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7002A_09 数据手册

2N7002A

SEMICONDUCTOR

N CHANNEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR

TECHNICAL DATA

INTERFACE AND SWITCHING APPLICATION.

FEATURES

High density cell design for low R_DS(ON)

Voltage controolled small signal switch.

Rugged and reliable.

DIM MILLIMETERS

2.93+ 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

High saturation current capablity.

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

MAXIMUM RATING (Ta=25

)

0.20 MIN

1.00+0.20/-0.10

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DSS

V_DGR

V_GSS

I_D

RATING

UNIT

Drain-Gate Voltage (R_GS

Gate-Source Voltage

)

1. SOURCE

2. GATE

115

800

200

150

3. DRAIN

Continuous

Pulsed

Drain Current

I_DP

P_D

Drain Power Dissipation

Junction Temperature

SOT-23

T_j

T_stg

Storage Temperature Range

-55 150

Marking

EQUIVALENT CIRCUIT

Lot No.

Type Name

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.

PLEASE HANDLE WITH CAUTION.

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage, Forward

Gate-Body Leakage, Reverse

SYMBOL

BV_DSS

I_DSS

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_GS=0V, I_D=10 A

V_DS=60V, V_GS=0V

V_GS=20V, V_DS=0V

V_GS=-20V, V_DS=0V

I_GSSF

I_GSSR

-1

2009. 7. 2

Revision No : 7

1/4

12 3 4

下载PDF

与2N7002A_09相关器件

型号	品牌	描述	获取价格	数据表
2N7002A_13	KEC	N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002A-13	DIODES	Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格
2N7002A-7	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002-AE3-R	SUPERTEX	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002-AE3-R	UTC	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002AK-Q	NEXPERIA	60 V, N-channel Trench MOSFETProduction	获取价格