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2N7002A_13 PDF预览

2N7002A_13

更新时间: 2022-06-03 05:54:44
品牌 Logo 应用领域
KEC 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 819K
描述
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002A_13 数据手册

 浏览型号2N7002A_13的Datasheet PDF文件第2页浏览型号2N7002A_13的Datasheet PDF文件第3页浏览型号2N7002A_13的Datasheet PDF文件第4页 
2N7002A  
SEMICONDUCTOR  
N CHANNEL ENHANCEMENT MODE  
FIELD EFFECT TRANSISTOR  
TECHNICAL DATA  
INTERFACE AND SWITCHING APPLICATION.  
FEATURES  
E
L
B
L
· High density cell design for low RDS(ON)  
· Voltage controlled small signal switch.  
· Rugged and reliable.  
.
DIM MILLIMETERS  
_
+
A
B
C
D
E
2.93 0.20  
1.30+0.20/-0.15  
1.30 MAX  
0.40+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
2
3
· High saturation current capablity.  
1
G
H
J
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
K
L
Q
P
P
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
Drain-Source Voltage  
SYMBOL  
VDSS  
VDGR  
VGSS  
ID  
RATING  
60  
UNIT  
V
Q
0.1 MAX  
M
Drain-Gate Voltage (RGS1)  
Gate-Source Voltage  
60  
V
1. SOURCE  
2. GATE  
V
±20  
115  
3. DRAIN  
Continuous  
Drain Current  
Pulsed  
mA  
IDP  
800  
PD  
Drain Power Dissipation  
Junction Temperature  
200  
mW  
SOT-23  
Tj  
150  
Tstg  
Storage Temperature Range  
-55150  
Marking  
EQUIVALENT CIRCUIT  
Lot No.  
Type Name  
WB  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage, Forward  
Gate-Body Leakage, Reverse  
SYMBOL  
BVDSS  
IDSS  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
V
VGS=0V, ID=10μA  
60  
-
-
-
-
-
-
1
VDS=60V, VGS=0V  
VGS=20V, VDS=0V  
VGS=-20V, VDS=0V  
μA  
IGSSF  
-
1
μA  
IGSSR  
-
-1  
μA  
2009. 11. 17  
Revision No : 8  
1/4  

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