2N7002A
SEMICONDUCTOR
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
E
L
B
L
· High density cell design for low RDS(ON)
· Voltage controlled small signal switch.
· Rugged and reliable.
.
DIM MILLIMETERS
_
+
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
· High saturation current capablity.
1
G
H
J
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
Q
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
VDSS
VDGR
VGSS
ID
RATING
60
UNIT
V
Q
0.1 MAX
M
Drain-Gate Voltage (RGS≤ 1㏁)
Gate-Source Voltage
60
V
1. SOURCE
2. GATE
V
±20
115
3. DRAIN
Continuous
Drain Current
Pulsed
mA
IDP
800
PD
Drain Power Dissipation
Junction Temperature
200
mW
℃
SOT-23
Tj
150
Tstg
Storage Temperature Range
-55∼ 150
℃
Marking
EQUIVALENT CIRCUIT
Lot No.
Type Name
WB
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BVDSS
IDSS
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
VGS=0V, ID=10μA
60
-
-
-
-
-
-
1
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
μA
IGSSF
-
1
μA
IGSSR
-
-1
μA
2009. 11. 17
Revision No : 8
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