RoHS
COMPLIANT
2N7002BDW
N-Channel and N-Channel Complementary MOSFET
Product Summary
● VDS
60V
● ID
350mA
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
<1000mΩ
<1400mΩ
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface:TTL/CMOS
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
60
±30
V
V
350
TA=25℃
Drain Current
ID
mA
A
221
TA=100℃
Pulsed Drain Current A
Total Power Dissipation B
IDM
2
240
TA=25℃
PD
mW
℃
96
TA=100℃
-55~+150
Junction and Storage Temperature Range
TJ ,TSTG
■Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient C
Steady-State
RθJA
430
520
℃/W
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
2N7002BDW
F2
72B
3000
30000
120000
7“ reel
1 / 8
S-E441
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,25-Sep-23