Datasheet > 2N7002B

2N7002B

更新时间： 2024-09-26 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		栅栅极
页数	文件大小	规格书
4页	739K
描述
漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:1.15A;栅极-源极阈值电压:2.5V @ 250uA;漏源导通电阻:5Ω@10V;最大功耗（Ta = 25°C）:225mW;种类:N-Channel;Vgs(th)(V):±20

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数据手册

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2N7002B 数据手册

UMW

2N7002

23 Plastic-Encapsulate MOSFETS

SOT

2N7002 MOSFET (N-Channel)

V_(BR)DSSR_DS(on)MAX

I_D

SOT-23

10V

115m

7Ω 5V

1. GATE

2. SOURCE

3. DRAIN

APPLICATION

FEATURE

Load Switch for Portable Devices

High density cell design for low R_DS(ON)

Voltage controlled small signal switch

Rugged and reliable

^zDC/DC Converter

High saturation current capability

MARKING

Equivalent Circuit

7002

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Value

Unit

V_DS

V_GS

I_D

Gate-Source Voltage

Continuous Drain Current

Power Dissipation

0.115

P_D

R_θJA

T_J

0.225

556

Thermal Resistance from Junction to Ambient

Junction Temperature

℃/W

150

℃

Storage Temperature

T_stg

-50 ~+150

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