Datasheet > 2N7002_14

2N7002_14

更新时间： 2024-09-25 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	174K
描述
60V N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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2N7002_14 数据手册

2N7002

60V N-Channel Enhancement Mode MOSFET

FEATURES

0.120(3.04)

0.110(2.80)

• R_DS(ON), V_GS@10V,I_DS@500mA=5

• R_DS(ON), V_GS@4.5V,I_DS@75mA=7.5

• Advanced Trench Process Technology

0.056(1.40)

0.047(1.20)

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• Lead free in comply with EU RoHS 2011/65/EU directives

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.008(0.20)

0.003(0.08)

0.079(2.00)

0.070(1.80)

0.004(0.10)

0.000(0.00)

0.044(1.10)

0.035(0.90)

0.020(0.50)

0.013(0.35)

MECHANICALDATA

• Case : SOT-23 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx. Weight : 0.0003 ounces, 0.008 grams

• Marking : S72

Maximum Ratings and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

Symbol

V_{D S}

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_{G S}

I_D

+20

250

1300

^OC

1 )

Pulsed Drain Current

I_{D M}

T_A=25^O

T_A=75^O

350

210

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

Junction-to Ambient Thermal Resistance(PCB mounted)²

T_J,T_{S T G}

R_{θJ A}

-55 to + 150

357

^OC/W

Note:1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec

August 29,2013-REV.03

PAGE . 1

12 3 4 5 6 7

中文翻译

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