Datasheet > 2N7002_09

2N7002_09

更新时间： 2024-11-21 12:50:03

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
4页	304K
描述
Small Signal MOSFET

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中文翻译

获取价格

数据手册

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2N7002_09 数据手册

WEITRON

2N7002

Small Signal MOSFET

N-Channel

DRAIN

P b

Lead(Pb)-Free

GATE

SOT-23

SOURCE

Maximum Ratings (T =25°C Unless Otherwise Specified)

Rating

Symbol

Value

Unit

Drain Source Voltage

DSS

Drain Gate Voltage(RGS = 1.0MΩ)

DGR

115

800

Drain Current

Continuous TC = 25°C (Note 1.)

– Con tinuouTsC= 100°C (Note 1.)

Pulsed (Note2.)

Gate Source Voltage

Con tinuous

Non–repe titive (tp≤ 50µs)

GSM

Thermal Characteristics (T =25°C Unless Otherwise Specified)

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note3.) TA=25°C

Derate above 25°C

225

1.8

mW/°C

θJA

Thermal Resistance, Junction to Ambient

556

°C/W

Total Device Dissipation

Alumina Substrate,(Note4.)TA =25°C

Derate above 25°C

mW/°C

300

2.4

Thermal Resistance, Junction to Ambient

Junction Temperature

417

°C/W

°C

θJA

-55 to +150

Storage Temperature

°C

stg

Note :

1.The Power Dissipation of thepackage may result in a lower continuous drain current.

2.PulseTest: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.

3.FR-5 = 1.0 x 0.75 x 0.062 in.

4.Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

Device Marking

2N7002 = 702

WEITRON

http://www.weitron.com.tw

Rev.B 08-Jul-09

1/4

12 3 4

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