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2N7002 PDF预览

2N7002

更新时间: 2024-11-18 07:29:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关光电二极管
页数 文件大小 规格书
9页 282K
描述
OptiMOS? Small-Signal-Transistor

2N7002 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.25
Samacsys Description:2N7002, N-channel MOSFET Transistor, 0.30 A 60 V, 3-Pin PG-SOT-23其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.3 A最大漏极电流 (ID):0.3 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):3 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

2N7002 数据手册

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2N7002  
OptiMOSSmall-Signal-Transistor  
Product Summary  
Features  
V DS  
60  
3
V
• N-channel  
R DS(on),max  
V
V
GS=10 V  
GS=4.5 V  
• Enhancement mode  
• Logic level  
4
I D  
0.3  
PG-SOT23  
A
• Avalanche rated  
• fast switching  
• Pb-free lead-plating; RoHS compliant  
• Qualified according to JEDEC(1) for target applications  
• Halogen-free according to IEC61249-2-21  
3
1
2
Type  
Package  
Tape and Reel Information  
Marking  
72s  
HalogenFree Packing  
Yes Non Dry  
2N7002  
PG-SOT-23 H6327: 3000 pcs/reel  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
T A=70 °C  
Continuous drain current  
0.30  
0.24  
A
I D,pulse  
E AS  
T A=25 °C  
Pulsed drain current  
1.2  
1.3  
I D=0.3 A, R GS=25  
Avalanche energy, single pulse  
mJ  
I D=0.3 A, V DS=48 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
V
T
j,max=150 °C  
V GS  
Gate source voltage  
ESD class  
±20  
JESD22-A114 (HBM)  
class 0 (<250V)  
0.5  
(2)  
T A=25 °C  
Power dissipation  
W
P tot  
T j, T stg  
Operating and storage temperature  
-55 ... 150  
55/150/56  
°C  
IEC climatic category; DIN IEC 68-1  
(1) J-STD20 and JESD22  
Rev. 2.3  
page 1  
2010-08-26  

2N7002 替代型号

型号 品牌 替代类型 描述 数据表
2N7002DWL6327 INFINEON

类似代替

Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal
2N7002DWH6327 INFINEON

类似代替

OptiMOS™ Small-Signal-Transistor
2N7002LT1G ONSEMI

功能相似

Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23

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