2N6849U

更新时间： 2024-11-25 07:29:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关
页数	文件大小	规格书
4页	149K
描述
P-CHANNEL MOSFET

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中文翻译

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数据手册

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2N6849U 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

P-CHANNEL MOSFET

Qualified per MIL-PRF-19500/564

DEVICES

LEVELS

JAN

JANTX

JANTXV

JANS

2N6849 2N6849U

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Drain – Source Voltage

Symbol

V_DS

Value

-100

Unit

Vdc

Gate – Source Voltage

V_GS

± 20

Continuous Drain Current

I_D1

I_D2

-6.5

Adc

T_C= +25°C

Continuous Drain Current

-4.1

T_C= +100°C

Max. Power Dissipation

P_tl

25 ⁽¹⁾

0.3 ⁽²⁾

Drain to Source On State Resistance

Operating & Storage Temperature

R_ds(on)

T_op, T_stg

-55 to +150

°C

2N6849

TO-205AF

Note: (1) Derated Linearly by 0.2 W/°C for T_C> +25°C

(2) V_GS= -10Vdc, I_D= -4.1A

(formerly TO-39)

SEE FIGURE 1

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= -1mAdc

V_(BR)DSS

-100

Vdc

Gate-Source Voltage (Threshold)

V_GS(th)1

V_GS(th)2

V_GS(th)3

-2.0

-1.0

-5.0

-4.0

_DS≥ V_GS, I_D= -0.25mA

V_DS≥ V_GS, I_D= -0.25mA, T_j= +125°C

_DS≥ V_GS, I_D= -0.25mA, T_j= -55°C

Vdc

Gate Current

_GS= ±20V, V_DS= 0V

V_GS= ±20V, V_DS= 0V, T_j= +125°C

I_GSS1

I_GSS2

±100

±200

nAdc

Drain Current

V_GS= 0V, V_DS= -80V

2N3849U

18 PIN LCC

I_DSS1

I_DSS2

-25

-0.25

µAdc

mAdc

_GS= 0V, V_DS= -80V, T_j= +125°C

Static Drain-Source On-State Resistance

_GS= -10V, I_D= -4.1A pulsed

SEE FIGURE 2

r_DS(on)1

r_DS(on)2

0.3

0.32

V_GS= -10V, I_D= -6.5A pulsed

T_j= -125°C

V_GS= -10V, I_D= -4.1A pulsed

r_DS(on)3

V_SD

0.54

-4.3

Diode Forward Voltage

V_GS= 0V, I_D= -6.5A pulsed

Vdc

T4-LDS-0009 Rev. 2 (091456)

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