Datasheet > 2N6426_07

2N6426_07

更新时间： 2024-11-25 03:56:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管达林顿晶体管
页数	文件大小	规格书
7页	297K
描述
Darlington Transistors NPN Silicon

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2N6426_07 数据手册

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2N6426

TO-92

NPN Darlington Transistor

This device is designed for applications requiring extremely

high current gain at currents to 1.0 A. Sourced from

Process 05. See MPSA14 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.2

-55 to +150

°C

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N6426

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

mW/°C

°C/W

R_θ

Thermal Resistance, Junction to Ambient

200

R_θ

°C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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2N6426-5F	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5F, 3
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