2N6349-C

更新时间： 2024-11-09 12:59:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		栅极触发装置可控硅三端双向交流开关
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2N6349-C 数据手册

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by 2N6342/D

SEMICONDUCTOR TECHNICAL DATA

Silicon Bidirectional Triode Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers,

motor controls, heating controls and power supplies; or wherever full-wave silicon

gate controlled solid-state devices are needed. Triac type thyristors switch from a

blocking to a conducting state for either polarity of applied anode voltage with positive

or negative gate triggering.

TRIACs

8 AMPERES RMS

200 thru 800 VOLTS

•

Blocking Voltage to 800 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

•

Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)

or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)

For 400 Hz Operation, Consult Factory

MT1

•

12 Ampere Devices Available as 2N6342A thru 2N6349A

MT2

CASE 221A-04

(TO-220AB)

STYLE 4

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

*Peak Repetitive Off-State Voltage

DRM

Volts

(Gate Open, T = –40 to +110°C)

1/2 Sine Wave 50 to 60 Hz, Gate Open

2N6342, 2N6346

2N6343, 2N6347

2N6344, 2N6348

2N6345, 2N6349

200

400

600

800

*RMS On-State Current

Full Cycle Sine Wave 50 to 60 Hz

(T = +80°C)

(T = +90°C)

Amps

T(RMS)

*Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, T = +80°C)

Preceded and followed by Rated Current

100

TSM

I t

A s

Circuit Fusing

(t = 8.3 ms)

*Peak Gate Power (T = +80°C, Pulse Width = 2 µs)

0.5

Watts

Watt

Amps

Volts

°C

*Average Gate Power (T = +80°C, t = 8.3 ms)

G(AV)

*Peak Gate Current

*Peak Gate Voltage

*Operating Junction Temperature Range

*Storage Temperature Range

–40 to +125

–40 to +150

°C

stg

1. V

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

DRM

voltage ratings of the devices are exceeded.

REV 1

Motorola Thyristor Device Data

Motorola, Inc. 1995

12 3 4 5 6

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