Datasheet > 2N6354

2N6354

更新时间： 2024-11-27 06:19:11

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	42K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2N6354 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2N6354

DESCRIPTION

·With TO-3 package

·Excellent safe operating area

·Fast switching speed

·Low collector saturation voltage

·High power dissipation

APPLICATIONS

·For switching applications in military

and industrial equipment

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

150

120

6.5

UNIT

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

P_D

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

140

200

-65~200

℃

T_j

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.25

℃/W

12 3

中文翻译

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