Datasheet > 2N6356

2N6356

更新时间： 2024-11-02 06:18:07

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	110K
描述
Silicon NPN Power Transistors

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2N6356 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6356

DESCRIPTION

·With TO-3 package

·High DC current gain

·DARLINGTON

APPLICATIONS

·For general-purpose amplifier and

low-frequency switching applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

I_B

Base current

0.5

P_D

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

200

-65~200

ꢀ

T_j

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

1.09

ꢀ/W

12 3

中文翻译

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