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2N6283 PDF预览

2N6283

更新时间: 2024-11-04 05:57:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 119K
描述
Silicon NPN Power Transistors

2N6283 数据手册

 浏览型号2N6283的Datasheet PDF文件第2页浏览型号2N6283的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6282 2N6283 2N6284  
DESCRIPTION  
·With TO-3 package  
·Complement to type 2N6285/6286/6287  
·High DC current gain  
·DARLINGTON  
APPLICATIONS  
·For use in general-purpose amplifier and  
low-frequency switching applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VAL
60  
UNIT  
2N6282  
2N6283  
2N6284  
2N6282  
2N6283  
2N6284  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
100  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
20  
Collector current-peak  
Base current  
40  
A
0.5  
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
160  
200  
-65~200  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.09  
/W  

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