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2N5950 PDF预览

2N5950

更新时间: 2024-11-01 22:35:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管射频小信号场效应晶体管
页数 文件大小 规格书
2页 200K
描述
SFET RF,VHF, UHF, Amplitiers

2N5950 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.59
Is Samacsys:N配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):2 pF
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N5950 数据手册

 浏览型号2N5950的Datasheet PDF文件第2页 

2N5950 替代型号

型号 品牌 替代类型 描述 数据表
2N5950LEADFREE CENTRAL

功能相似

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
2N5950 TI

功能相似

VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, PLASTIC PACKAGE-3

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2N5950APMLEADFREE CENTRAL

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2N5950APP CENTRAL

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2N5950APPLEADFREE CENTRAL

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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C