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2N5950APMLEADFREE PDF预览

2N5950APMLEADFREE

更新时间: 2024-11-25 20:59:31
品牌 Logo 应用领域
CENTRAL 放大器晶体管
页数 文件大小 规格书
1页 27K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92,

2N5950APMLEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.12Is Samacsys:N
配置:SINGLEFET 技术:JUNCTION
最大反馈电容 (Crss):2 pF最高频带:VERY HIGH FREQUENCY BAND
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2N5950APMLEADFREE 数据手册

  

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