5秒后页面跳转
2N5950APPLEADFREE PDF预览

2N5950APPLEADFREE

更新时间: 2024-02-12 23:24:13
品牌 Logo 应用领域
CENTRAL 放大器晶体管
页数 文件大小 规格书
1页 27K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92,

2N5950APPLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.12配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):2 pF
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2N5950APPLEADFREE 数据手册

  

与2N5950APPLEADFREE相关器件

型号 品牌 描述 获取价格 数据表
2N5950LEADFREE CENTRAL RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C

获取价格

2N5950R ALLEGRO Transistor

获取价格

2N5950TRB CENTRAL RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C

获取价格

2N5950TRC CENTRAL RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C

获取价格

2N5950TRELEADFREE CENTRAL RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C

获取价格

2N5950TRF CENTRAL RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C

获取价格