Datasheet > 2N5951_D27Z

2N5951_D27Z

更新时间： 2024-01-13 06:46:50

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关晶体管
页数	文件大小	规格书
3页	71K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92, 3 PIN

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技术参数
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2N5951_D27Z 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TO-92	包装说明：	CYLINDRICAL, O-PBCY-T3
针数：	3	Reach Compliance Code：	compliant
HTS代码：	8541.21.00.95	风险等级：	5.61
配置：	SINGLE	FET 技术：	JUNCTION
最大反馈电容 (Crss)：	2 pF	最高频带：	VERY HIGH FREQUENCY BAND
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	工作模式：	DEPLETION MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.35 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2N5951_D27Z 数据手册

September 2007

2N5951

N-Channel RF Amplifier

•

This device is designed primarily for electronic switching applications such as low on resistance analog switching.

Sourced from process 50.

TO-92

1. Gate 2. Source 3. Drain

Absolute Maximum Ratings* T_a=25°C unless otherwise noted

Symbol Parameter

Value

Units

V_DG

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

V_GS

-30

I_GF

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 ~ 150

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T_a=25°C unless otherwise noted

Symbol

Parameter

Max.

Units

P_D

Total Device Dissipation

Derate above 25°C

350

2.8

mW/°C

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

125

357

°C/W

2N5951 Rev. 1.0.0

www.fairchildsemi.com

12 3

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