Datasheet > 2N5952_NL

2N5952_NL

更新时间： 2024-11-03 05:52:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	25K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92, LEAD FREE, TO-92, 3 PIN

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2N5952_NL 数据手册

2N5952

N-Channel RF Ampifier

•

This device is designed primarily for electronic switching applications

such as low on resistance analog switching.

Sourced from process 50.

•

TO-92

1. Gate 2. Source 3. Drain

Absolute Maximum Ratings * ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

-30

°C

T , T

Operating and Storage Junction Temperature Range

-55 ~ +150

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

-30

Typ.

Max.

Units

Off Characteristics

Gate-Source Breakdown Voltage

Gate Reverse Current

= 0, I = -1.0µA

(BR)GSS

GSS

= -15V, V = 0

-1.0

-3.5

Gate-Source Cutoff Voltage

= 15V, I = 100nA

-1.3

4.0

GS(off)

On Characteristics

Zero-Gate Voltage Drain Current *

Small Signal Characteristics

= 15V, V = 0

8.0

DSS

Forward Transfer Conductance

Output Conductance

Input Capacitance

= 15V, V = 0, f = 1.0kHz

2000

6500 µmhos

= 15V, V = 0, f = 100MHz

6.0

2.0

µmhos

= 15V, V = 0, f = 1.0MHz

iss

rss

Reverse Transfer Capacitance

Noise Figure

= 15V, V = 0, f = 1.0MHz

= 15V, R = 1.0kΩ,

f = 1.0kHz

* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 1.0%

Thermal Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Max.

Units

Total Device Dissipation

Derate above 25°C

350

2.8

mW/°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

125

357

°C/W

θJC

θJA

Rev. A1, November 2002

12 3

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与2N5952_NL相关器件

型号	品牌	获取价格	描述	数据表
2N5952APP	CENTRAL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
2N5952APPLEADFREE	CENTRAL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
2N5952-D74Z	FAIRCHILD	获取价格	Transistor
2N5952-D75Z	FAIRCHILD	获取价格	Transistor
2N5952LEADFREE	CENTRAL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
2N5952TRE	CENTRAL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
2N5952TRELEADFREE	CENTRAL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
2N5952TRF	CENTRAL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
2N5952TRG	CENTRAL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
2N5953	FAIRCHILD	获取价格	SFET RF,VHF, UHF, Amplitiers

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