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2N5952-D74Z PDF预览

2N5952-D74Z

更新时间： 2024-11-02 14:46:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 25K
描述
Transistor

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中文翻译

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2N5952-D74Z 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.84
FET 技术：JUNCTIONJESD-609代码：e3
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.35 W子类别：Other Transistors
表面贴装：NO端子面层：Matte Tin (Sn)
Base Number Matches：1

2N5952-D74Z 数据手册

 浏览型号2N5952-D74Z的Datasheet PDF文件第2页浏览型号2N5952-D74Z的Datasheet PDF文件第3页 
2N5952  
N-Channel RF Ampifier  
•
This device is designed primarily for electronic switching applications  
such as low on resistance analog switching.  
Sourced from process 50.  
•
TO-92  
1. Gate 2. Source 3. Drain  
1
Absolute Maximum Ratings * T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
30  
Units  
V
V
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
V
V
DG  
GS  
-30  
I
10  
mA  
°C  
GF  
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
-30  
Typ.  
Max.  
Units  
Off Characteristics  
V
Gate-Source Breakdown Voltage  
Gate Reverse Current  
V
V
V
= 0, I = -1.0µA  
V
nA  
V
(BR)GSS  
GSS  
DS  
GS  
DS  
G
I
= -15V, V = 0  
-1.0  
-3.5  
DS  
V
Gate-Source Cutoff Voltage  
= 15V, I = 100nA  
-1.3  
4.0  
GS(off)  
D
On Characteristics  
Zero-Gate Voltage Drain Current *  
Small Signal Characteristics  
I
V
= 15V, V = 0  
8.0  
mA  
DSS  
DS  
GS  
g
g
Forward Transfer Conductance  
Output Conductance  
Input Capacitance  
V
V
V
V
V
= 15V, V = 0, f = 1.0kHz  
2000  
6500 µmhos  
fs  
DS  
DS  
DS  
DS  
DS  
GS  
= 15V, V = 0, f = 100MHz  
75  
6.0  
2.0  
2.0  
µmhos  
pF  
os  
GS  
C
C
= 15V, V = 0, f = 1.0MHz  
GS  
iss  
rss  
Reverse Transfer Capacitance  
Noise Figure  
= 15V, V = 0, f = 1.0MHz  
pF  
GS  
NF  
= 15V, R = 1.0kΩ,  
dB  
G
f = 1.0kHz  
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 1.0%  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
350  
2.8  
mW  
mW/°C  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
125  
357  
°C/W  
°C/W  
θJC  
θJA  
©2002 Fairchild Semiconductor Corporation  
Rev. A1, November 2002  
123

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