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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2N5953TRE | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRELEADFREE | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRF | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRG | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRH | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5954 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO66 |
|
| 2N5954 | NJSEMI |
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Silicon N-P-N and P-N-P Medium-Power Transistors |
|
| 2N5954 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 2N5954 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors |
|
| 2N5954 | ISC |
获取价格 |
Silicon PNP Power Transistors |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
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台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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