是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.64 | Is Samacsys: | N |
FET 技术: | JUNCTION | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.36 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5950/D11Z | TI |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 | |
2N5950/D26Z | TI |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 | |
2N5950/D28Z | TI |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 | |
2N5950/D81Z | TI |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 | |
2N5950/L34Z | TI |
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VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 | |
2N5950_J18Z | FAIRCHILD |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5950APM | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5950APMLEADFREE | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5950APP | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5950APPLEADFREE | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |