是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-204AA |
包装说明: | TO-3, 2 PIN | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.18 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 25 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-3 | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 200 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5883/D | ETC |
获取价格 |
Complementary Silicon High-Power Transistors | |
2N5883E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N5883G | ONSEMI |
获取价格 |
Complementary Silicon High−Power Transistors | |
2N5883LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2N5884 | NJSEMI |
获取价格 |
POWER TRANSISTORS COMPLEMENTARY SILICON | |
2N5884 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
2N5884 | ASI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 P | |
2N5884 | ONSEMI |
获取价格 |
Complementary Silicon High−Power Transistors | |
2N5884 | STMICROELECTRONICS |
获取价格 |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS | |
2N5884 | MOSPEC |
获取价格 |
POWER TRANSISTORS(25A,200W) |