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2N5883 PDF预览

2N5883

更新时间: 2024-10-29 14:54:35
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
18页 655K
描述
60V,25A,200W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

2N5883 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-204AA
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.18
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):25 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-3JESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

2N5883 数据手册

 浏览型号2N5883的Datasheet PDF文件第7页浏览型号2N5883的Datasheet PDF文件第8页浏览型号2N5883的Datasheet PDF文件第9页浏览型号2N5883的Datasheet PDF文件第11页浏览型号2N5883的Datasheet PDF文件第12页浏览型号2N5883的Datasheet PDF文件第13页 
PDN01250  
2/10/23  
Stock Only  
Stock Only  
http://www.centralsemi.com  
*** CONTINUED FROM PRIOR PAGE ***  
* All Plating types (PBFREE,TIN/LEAD) for each item listed are included in this notice.  
Central Part Number  
MJE221  
MJE222  
MJE223  
MJE224  
MJE225  
MJE230  
MJE231  
MJE232  
MJE233  
MJE234  
MJE235  
MJE2360T  
MJE240  
MJE241  
MJE242  
MJE243  
MJE244  
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MJE250  
MJE251  
MJE252  
MJE253  
MJE254  
MJE2801T  
MJE2901T  
MJE2955T  
MJE340  
MJE341  
MJE344  
MJE344 SL  
MJE3440  
MJE350  
MJE370  
MJE371  
MJE520  
MJE521  
MJE700  
MJE701  
MJE702  
MJE703  
MJE710  
MJE711  
MJE712  
MJE720  
*** CONTINUED ***  

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