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2N5685_1 PDF预览

2N5685_1

更新时间: 2024-11-27 07:28:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
3页 121K
描述
NPN POWER SILICON TRANSISTOR

2N5685_1 数据手册

 浏览型号2N5685_1的Datasheet PDF文件第2页浏览型号2N5685_1的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/464  
DEVICES  
LEVELS  
JAN  
2N5685  
2N5686  
JANTX  
JANTV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol 2N5685  
2N5686  
Unit  
VCEO  
VCBO  
VEBO  
IB  
60  
60  
5.0  
15  
50  
80  
80  
5.0  
15  
50  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
Collector Current  
IC  
@ TC = +25°C (1)  
@ TC = +100°C (1)  
300  
171  
300  
171  
W
W
Total Power Dissipation  
PT  
TO-3 (TO-204AE)  
Operating & Storage Junction Temperature Range  
TJ, Tstg  
-55 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
Thermal Resistance, Junction-to-Case  
.0584  
°C/W  
RθJC  
Note:  
1. Derate linearly 1.715 W/°C between TC = 25°C and TC = 200°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS (1)  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 100mAdc  
V(BR)CEO  
Vdc  
2N5685  
2N5686  
60  
80  
Collector-Emitter Cutoff Current  
VCE = 30Vdc  
2N5685  
2N5686  
ICEO  
500  
500  
μAdc  
V
CE = 40Vdc  
Collector-Emitter Cutoff Current  
VCE = 60Vdc, VBE = 1.5Vdc  
VCE = 80Vdc, VBE = 1.5Vdc  
Collector-Base Cutoff Current  
VCE = 60Vdc  
2N5685  
2N5686  
ICEX  
10  
10  
μAdc  
2N5685  
2N5686  
ICBO  
2.0  
2.0  
mAdc  
mAdc  
V
CE = 80Vdc  
Emitter-Base Cutoff Current  
IEBO  
1.0  
V
EB = 5.0Vdc  
T4-LDS-0162 Rev. 1 (100546)  
Page 1 of 3  

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