2N5686

更新时间： 2024-11-14 22:49:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	134K
描述
High-Current Complementary Silicon Power Transistors

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2N5686 数据手册

ON Semiconductort

PNP

High-Current Complementary

Silicon Power Transistors

2N5684

NPN

2N5686

. . . designed for use in high–power amplifier and switching circuit

applications.

• High Current Capability –

I Continuous = 50 Amperes.

50 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80 VOLTS

• DC Current Gain –

= 15–60 @ I = 25 Adc

• Low Collector–Emitter Saturation Voltage –

= 1.0 Vdc (Max) @ I = 25 Adc

CE(sat)

300 WATTS

MAXIMUM RATINGS (1)

2N5684

2N5686

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current – Continuous

Base Current

Symbol

Unit

Vdc

Adc

CEO

5.0

CASE 197A–05

TO–204AE

Total Device Dissipation @ T = 25_C

300

1.715

Watts

W/_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +200

stg

THERMAL CHARACTERISTICS (1)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

0.584

_C/W

300

250

200

150

100

80 100 120 140 160 180 200

TEMPERATURE (°C)

Figure 1. Power Derating

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

May, 2001 – Rev. 10

2N5684/D

12 3 4 5 6 7 8

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2N5686 替代型号

型号	品牌	替代类型	描述	数据表
2N5686G	ONSEMI	完全替代	High-Current Complementary Silicon Power Transistors
JANTXV2N5686	MICROSEMI	功能相似	NPN POWER SILICON TRANSISTOR
JANTX2N5686	MICROSEMI	功能相似	NPN POWER SILICON TRANSISTOR

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2N5686G	ONSEMI	获取价格	High-Current Complementary Silicon Power Transistors
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2N5718	NSC	获取价格	TRANSISTOR,JFET,N-CHANNEL,800UA I(DSS),TO-92
2N5719	NJSEMI	获取价格	SCRS 5AMP, PLANAR
2N5720	NJSEMI	获取价格	SCRS 5AMP, PLANAR
2N5721	NJSEMI	获取价格	SCRS 5AMP, PLANAR
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