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2N5732 PDF预览

2N5732

更新时间: 2024-11-15 06:18:07
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3页 109K
描述
Silicon NPN Power Transistors

2N5732 数据手册

 浏览型号2N5732的Datasheet PDF文件第2页浏览型号2N5732的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5732  
DESCRIPTION  
·With TO-3 package  
·High current capability  
APPLICATIONS  
·For linear amplifier and inductive  
switching applications  
PINNING(see fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
100  
80  
UNIT  
V
Open emitter  
Open base  
V
Open collector  
7
V
20  
A
ICM  
Collector current-peak  
Total power dissipation  
Junction temperature  
Storage temperature  
30  
A
PT  
TC=25ꢀ  
87.5  
150  
-65~200  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction to case  
1.17  
/W  

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