生命周期: | Contact Manufacturer | 零件包装代码: | TO-204AA |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.32 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 50 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 5 |
JEDEC-95代码: | TO-3 | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 300 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5685_1 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
2N5685E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal | |
2N5686 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
2N5686 | MOSPEC |
获取价格 |
POWER TRANSISTORS(50A,300W) | |
2N5686 | ONSEMI |
获取价格 |
High-Current Complementary Silicon Power Transistors | |
2N5686 | NJSEMI |
获取价格 |
SI NPN POWER BJT | |
2N5686G | ONSEMI |
获取价格 |
High-Current Complementary Silicon Power Transistors | |
2N5687 | DIGITRON |
获取价格 |
TRANSISTOR,BJT,NPN,20V V(BR)CEO,500MA I(C),TO-39 | |
2N5688 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-117 | |
2N5716 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 50UA I(DSS) | TO-92 |