Datasheet > 2N5684_06

2N5684_06

更新时间： 2024-11-27 03:56:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	152K
描述
High−Current Complementary Silicon Power Transistors

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2N5684_06 数据手册

ON Semiconductort

PNP

High−Current Complementary

Silicon Power Transistors

2N5684

NPN

2N5686

. . . designed for use in high−power amplifier and switching circuit

applications.

• High Current Capability −

I Continuous = 50 Amperes.

50 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60−80 VOLTS

• DC Current Gain −

= 15−60 @ I = 25 Adc

• Low Collector−Emitter Saturation Voltage −

= 1.0 Vdc (Max) @ I = 25 Adc

CE(sat)

300 WATTS

w These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

MAXIMUM RATINGS (1)

2N5684

2N5686

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

Base Current

Symbol

Unit

Vdc

Adc

CEO

CASE 197A−05

TO−204AE

5.0

Total Device Dissipation @ T = 25_C

300

1.715

Watts

W/_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

−65 to +200

stg

THERMAL CHARACTERISTICS (1)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

0.584

_C/W

300

250

200

150

100

80 100 120 140 160 180 200

TEMPERATURE (°C)

Figure 1. Power Derating

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 11

2N5684/D

12 3 4 5 6 7

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