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2N5682

更新时间: 2024-01-13 03:48:38
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
2页 58K
描述
NPN POWER TRANSISTOR SILICON AMPLIFIER

2N5682 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.18
最大集电极电流 (IC):1 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzBase Number Matches:1

2N5682 数据手册

 浏览型号2N5682的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER TRANSISTOR SILICON AMPLIFIER  
Qualified per MIL-PRF-19500/ 583  
Devices  
Qualified Level  
JAN  
2N5681  
2N5682  
JANTX  
JANTXV  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Ratings  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
2N5681  
100  
2N5682 Units  
120  
120  
4.0  
1.0  
0.5  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Base Current  
Total Power Dissipation @ TA = +250C(1)  
@ TC = +250C(2)  
100  
4.0  
1.0  
0.5  
IB  
1.0  
10  
1.0  
10  
W
W
PT  
Operating & Storage Temperature Range  
-65 to +200 -65 to +200  
°C  
Top, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
TO-39*  
(TO-205AD)  
Symbol  
Max.  
17.5  
Unit  
0C  
R
qJC  
1) Derate linearly 5.7 mW/0C for TA > +250C  
2) Derate linearly 57 mW/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Symbol  
Min.  
Max.  
Unit  
100  
120  
V(BR)CEO  
IEBO  
Vdc  
mAdc  
mAdc  
IC = 10 mAdc  
2N5681  
2N5682  
Emitter-Base Cutoff Current  
VEB = 4.0 Vdc  
1.0  
10  
Collector-Emitter Cutoff Current  
VCE = 70 Vdc  
VCE = 80 Vdc  
2N5681  
2N5682  
ICEO  
Collector-Emitter Cutoff Current  
VBE = 1.5 Vdc  
VCE = 100 Vdc  
VCE = 120 Vdc  
Collector-Baser Cutoff Current  
VCE = 100 Vdc  
100  
100  
nAdc  
nAdc  
ICEX  
2N5681  
2N5682  
2N5681  
2N5682  
ICBO  
VCE = 120 Vdc  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

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