是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-3 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.22 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 50 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JEDEC-95代码: | TO-3 | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 300 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 2 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N5684G | ONSEMI |
功能相似 |
High-Current Complementary Silicon Power Transistors | |
JANTXV2N5684 | MICROSEMI |
功能相似 |
NPN POWER SILICON TRANSISTOR | |
JAN2N5684 | MICROSEMI |
功能相似 |
NPN POWER SILICON TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5683E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 | |
2N5684 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
2N5684 | ONSEMI |
获取价格 |
High-Current Complementary Silicon Power Transistors | |
2N5684 | NJSEMI |
获取价格 |
HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS | |
2N5684 | MOSPEC |
获取价格 |
POWER TRANSISTORS(50A,300W) | |
2N5684/D | ETC |
获取价格 |
High-Current Complementary Silicon Power Transistors | |
2N5684_06 | ONSEMI |
获取价格 |
High−Current Complementary Silicon Power Transistors | |
2N5684G | ONSEMI |
获取价格 |
High-Current Complementary Silicon Power Transistors | |
2N5685 | NJSEMI |
获取价格 |
HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS | |
2N5685 | MOSPEC |
获取价格 |
POWER TRANSISTORS(50A,300W) |