Datasheet > 2N5682NPN

2N5682NPN

更新时间： 2022-02-26 11:56:38

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3页	192K
描述
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

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2N5682NPN 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

2N5679 2N5681

2N5680 2N5682

PNP

NPN

TO-39

These Are High Voltage & High Current, General Purpose Transistors

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

2N5679

2N5681

100

2N5680

2N5682

120

UNITS

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector Current Continuous

Base Current

Power Dissipation @Ta=25 degC

Derate Above 25deg C

Power Dissipation @Tc=25 degC

Derate Above 25deg C

Operating And Storage Junction

Temperature Range

VCEO

VCBO

VEBO

100

120

4.0

1.0

0.5

1.0

5.7

mW/deg C

deg C

Tj, Tstg

-65 to +200

THERMAL RESISTANCE

Junction to Case

Junction to Ambient

Rth(j-c)

Rth(j-a)

17.5

175

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

2N5679 2N5680

2N5681 2N5682

UNITS

Collector -Emitter Voltage

Collector-Cut off Current

VCEO(sus) IC=10mA,IB=0

>100

<1.0

<10

>120

<1.0

<10

ICBO

ICEO

ICEX

VCB=100V, IE=0

VCB=120V, IE=0

VCE=70V, IB=0

VCE=80V, IB=0

VCE=100V,VEB=1.5V

VCE=120V,VEB=1.5V

<1.0

TC=150 deg C

VCE=100V,VEB=1.5V

VCE=120V,VEB=1.5V

VEB=4V, IC=0

<1.0

Emitter-Cut off Current

IEBO

Continental Device India Limited

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Data Sheet

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