Datasheet > 2N5682NPN

2N5682NPN

更新时间： 2022-02-26 11:56:38

品牌	Logo	应用领域
CDIL		高压
页数	文件大小	规格书
3页	192K
描述
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

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2N5682NPN 数据手册

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

2N5679-82

2N5679 2N5680

2N5681 2N5682

DESCRIPTION

SYMBOL TEST CONDITION

UNITS

DC Current Gain

hFE*

IC=1A,VCE=2V

IC=250mA,VCE=2V

>5.0

40-150

<0.60

<1.0

40-150

<0.60

<1.0

Collector Emitter Saturation Voltage VCE(Sat)* IC=250mA,IB=25mA

IC=500mA,IB=50mA

IC=1A, IB=200mA

<2,0

<2.0

Base Emitter on Voltage

VBE(on)* IC=250mA,VCE=2V

<1.0

SMALL SIGNAL CHARACTERISTICS

Small Signal Current Gain

hfe

Cob

IC=200mA, VCE=1.5V

f=1kHz

VCB=20V, IE=0

f=1MHz

IC=100mA, VCE=10V

f=10MHz

>20

<50

>30

>20

<50

>30

Out-Put Capacitance

Transistors Frequency

MHz

*Pulse Test: Pulse Width: =300us, Duty Cycle=2%

TO-39 Metal Can Package

DIM

MIN

MAX

9.39

8.50

6.60

0.53

0.88

2.66

5.33

0.86

1.02

—

8.50

7.74

6.09

0.40

—

2.41

4.82

0.71

0.73

12.70

42 DEG 48 DEG

PIN CONFIGURATION

1. EMITTER

2. BASE

3. COLLECTOR

Packing Detail

PACKAGE

STANDARD PACK

INNER CARTON BOX

OUTER CARTON BOX

Details

Net Weight/Qty

Size

Qty

Size

Qty

Gr Wt

40 kgs

TO-39

500 pcs/polybag 540 gm/500 pcs

3" x 7.5" x 7.5"

20.0K

17" x 15" x 13.5"

32.0K

Continental Device India Limited

Page 2 of 3

Data Sheet

123

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