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2N5681 PDF预览

2N5681

更新时间: 2024-02-27 03:50:25
品牌 Logo 应用领域
CDIL 高压
页数 文件大小 规格书
3页 192K
描述
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

2N5681 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-276AB
包装说明:CHIP CARRIER, R-CBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.15
最大集电极电流 (IC):1 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-276ABJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

2N5681 数据手册

 浏览型号2N5681的Datasheet PDF文件第2页浏览型号2N5681的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS  
2N5679 2N5681  
2N5680 2N5682  
PNP  
NPN  
TO-39  
TO-39  
These Are High Voltage & High Current, General Purpose Transistors  
ABSOLUTE MAXIMUM RATINGS.  
DESCRIPTION  
SYMBOL  
2N5679  
2N5681  
100  
2N5680  
2N5682  
120  
UNITS  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter -Base Voltage  
Collector Current Continuous  
Base Current  
Power Dissipation @Ta=25 degC  
Derate Above 25deg C  
Power Dissipation @Tc=25 degC  
Derate Above 25deg C  
Operating And Storage Junction  
Temperature Range  
VCEO  
VCBO  
VEBO  
IC  
IB  
PD  
V
V
V
A
A
100  
120  
4.0  
1.0  
0.5  
1.0  
5.7  
10  
W
mW/deg C  
W
mW/deg C  
deg C  
PD  
57  
Tj, Tstg  
-65 to +200  
THERMAL RESISTANCE  
Junction to Case  
Junction to Ambient  
Rth(j-c)  
Rth(j-a)  
17.5  
175  
deg C/W  
deg C/W  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
2N5679 2N5680  
2N5681 2N5682  
UNITS  
Collector -Emitter Voltage  
Collector-Cut off Current  
VCEO(sus) IC=10mA,IB=0  
>100  
<1.0  
-
<10  
-
>120  
-
<1.0  
-
<10  
-
V
ICBO  
ICEO  
ICEX  
VCB=100V, IE=0  
VCB=120V, IE=0  
VCE=70V, IB=0  
VCE=80V, IB=0  
VCE=100V,VEB=1.5V  
VCE=120V,VEB=1.5V  
uA  
uA  
uA  
uA  
uA  
uA  
<1.0  
-
<1.0  
TC=150 deg C  
VCE=100V,VEB=1.5V  
VCE=120V,VEB=1.5V  
VEB=4V, IC=0  
<1.0  
-
<1.0  
-
mA  
mA  
uA  
<1.0  
<1.0  
Emitter-Cut off Current  
IEBO  
Continental Device India Limited  
Page 1 of 3  
Data Sheet  

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