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2N5682 PDF预览

2N5682

更新时间: 2024-02-16 15:08:50
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
4页 70K
描述
SILICON NPN TRANSISTORS

2N5682 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.18
最大集电极电流 (IC):1 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzBase Number Matches:1

2N5682 数据手册

 浏览型号2N5682的Datasheet PDF文件第2页浏览型号2N5682的Datasheet PDF文件第3页浏览型号2N5682的Datasheet PDF文件第4页 
2N5681  
2N5682  
SILICON NPN TRANSISTORS  
SGS-THOMSON PREFERRED SALESTYPES  
NPN TRANSISTOR  
APPLICATIONS  
GENERAL PURPOSE SWITCHING  
GENERAL PURPOSE AMPLIFIERS  
DESCRIPTION  
The 2N5681, 2N5682 are high voltage silicon  
epitaxial planar NPN transistors in Jedec TO-39  
metal case intended for use as drivers for high  
power transistors in general purpose, amplifier  
and switching applications.  
TO-39  
The complementary PNP types are the 2N5679  
and 2N5680 respectively.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
2N5680  
100  
2N5682  
120  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
100  
120  
4
V
1
A
IB  
Base Current  
0.5  
A
o
Ptot  
Ptot  
Tstg  
Tj  
Total Dissipation at Tc 25 C  
10  
1
W
W
oC  
oC  
o
Total Dissipation at Tamb 50 C  
Storage Temperature  
-65 to 200  
200  
Max. Operating Junction Temperature  
1/4  
July 1997  

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