Datasheet > 2N5655_06

2N5655_06

更新时间： 2024-11-02 03:56:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	80K
描述
Plastic NPN Silicon High−Voltage Power Transistor

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2N5655_06 数据手册

2N5655, 2N5657

Plastic NPN Silicon

High−Voltage Power

Transistor

These devices are designed for use in line−operated equipment such

as audio output amplifiers; low−current, high−voltage converters; and

AC line relays.

http://onsemi.com

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

Features

• Excellent DC Current Gain −

= 30−250 @ I = 100 mAdc

250−350 VOLTS, 20 WATTS

• Current−Gain − Bandwidth Product −

f = 10 MHz (Min) @ I = 50 mAdc

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

Symbol 2N5655 2N5657 Unit

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

250

275

350

375

Vdc

Adc

TO−225AA

CASE 77−09

STYLE 1

CEO

6.0

Collector Current −

Continuous

Peak

0.5

1.0

MARKING DIAGRAM

Base Current

1.0

Adc

Total Device Dissipation @ T = 25°C

0.16

W/°C

Derate above 25°C

YWW

N565xG

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

°C/W

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

= Year

= Work Week

Thermal Resistance,

Junction−to−Case

6.25

°C/W

2N565x = Device Code

x = 5 or 7

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data.

= Pb−Free Package

ORDERING INFORMATION

Shipping

Device

2N5655

Package

TO−225

500 Units / Bulk

2N5655G

TO−225

(Pb−Free)

2N5657

TO−225

500 Units / Bulk

2N5657G

TO−225

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

October, 2006 − Rev. 9

2N5655/D

12 3 4 5

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2N5655G	ONSEMI	获取价格	Plastic NPN Silicon High−Voltage Power Transistor
2N5655LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2N5656	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N5656	ISC	获取价格	Silicon NPN Power Transistors
2N5656	NJSEMI	获取价格	SI NPN POWER BJT
2N5656	NSC	获取价格	TRANSISTOR,BJT,NPN,300V V(BR)CEO,500MA I(C),TO-126VAR
2N5656	ONSEMI	获取价格	POWER TRANSISTORS NPN SILICON
2N5656	JMNIC	获取价格	Silicon NPN Power Transistors
2N5656	CENTRAL	获取价格	300V,500mA,20W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
2N5656LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast