Datasheet > 2N5657

2N5657

更新时间： 2024-11-02 06:17:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	120K
描述
Silicon NPN Power Transistors

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中文翻译

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2N5657 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5655 2N5656 2N5657

DESCRIPTION

·With TO-126 package

·High breakdown voltage

APPLICATIONS

·For use in line-operated equipment

such as audio output amplifiers;

low-current ,high-voltage converters;

and AC line relays

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

275

325

375

250

300

350

UNIT

2N5655

2N5656

2N5657

2N5655

2N5656

2N5657

V_CBO

Collector-base voltage

Open emitter

Open base

V_CEO

Collector-emitter voltage

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

0.5

Collector current-Peak

Base current

1.0

0.25

P_D

T_j

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

6.25

℃/W

12 3

中文翻译

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与2N5657相关器件

型号	品牌	获取价格	描述	数据表
2N5657G	ONSEMI	获取价格	Plastic NPN Silicon High−Voltage Power Transistor
2N5657LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
2N5658	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3
2N5659	VISHAY	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal,
2N5659E3	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal,
2N5660	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N5660	ISC	获取价格	Silicon NPN Power Transistors
2N5660	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO66
2N5660	NJSEMI	获取价格	NPN SWITCHING TRANSISTORS
2N5660	SEMICOA	获取价格	Silicon NPN Transistor