Datasheet > 2N5582

2N5582

更新时间： 2024-02-05 05:18:37

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体开关晶体管
页数	文件大小	规格书
2页	211K
描述
NPN SILICON SWITCHING TRANSISTOR

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技术参数
数据手册

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2N5582 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.78
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN LEAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2N5582 数据手册

2N5581

Silicon NPN Transistor

Data Sheet

Description

Applications

• General purpose switching

• Low power

Semicoa Semiconductors offers:

• NPN silicon transistor

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N5581J)

• JANTX level (2N5581JX)

• JANTXV level (2N5581JV)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV

• Radiation testing (total dose) upon request

Features

• Hermetically sealed TO-46 metal can

• Also available in chip configuration

• Chip geometry 0400

• Reference document:

MIL-PRF-19500/423

Benefits

Please contact Semicoa for special configurations

• Qualification Levels: JAN, JANTX, and

JANTXV

www.SEMICOA.com or (714) 979-1900

• Radiation testing available

Absolute Maximum Ratings

T_C= 25°C unless otherwise specified

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

V_CEO

V_CBO

Rating

Unit

Volts

Collector Current, Continuous

I_C

800

mW/°C

°C

Power Dissipation, T_A= 25°C

Derate linearly above 25°C

Power Dissipation, T_C= 25°C

Derate linearly above 25°C

500

P_T

2.86

P_T

11.43

Operating Junction Temperature

T_J

-55 to+200

°C

Storage Temperature

T_STG

-55 to+200

Semicoa Semiconductors, Inc.

Rev. D

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 2

www.SEMICOA.com

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