Datasheet > 2N5401-X-T92-B

2N5401-X-T92-B

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
友顺 - UTC		晶体开关晶体管高压
页数	文件大小	规格书
2页	67K
描述
HIGH VOLTAGE SWITCHING TRANSISTOR

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N5401-X-T92-B 数据手册

Transys

Electronics

I M I T E D

TO-92 Plastic-Encapsulated Transistors

TO-92

2N5401 TRANSISTOR (PNP)

FEATURE

Power dissipation

P_CM: 0.625 W (Tamb=25℃)

Collector current

I_CM: - 0.6

Collector-base voltage

1. EMITTER

2. BASE

3. COLLECTOR

1 2 3

V_(BR)CBO: -160 V

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

MIN

-160

-150

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic= -100 µA, I_E=0

Ic= -1 mA, I_B=0

I_E= -10 µA, I_C=0

V_CB= -120 V, I_E=0

V_EB= -4 V, I_C=0

-0.1

µA

Emitter cut-off current

I_EBO

h_FE(1)

V_CE= -5 V, I_C=-1 mA

V_CE= -5 V, I_C= -10 mA

V_CE= -5 V, I_C=-50 mA

I_C= -50 mA, I_B= -5 mA

V_CE=-5V, I_C=-10mA

f =30MHz

DC current gain

h_FE(2)

250

h_FE(3)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

-0.5

-1

Transition frequency

100

MHz

f_T

下载PDF

与2N5401-X-T92-B相关器件

型号	品牌	描述	获取价格	数据表
2N5401-X-T92-K	UTC	HIGH VOLTAGE SWITCHING TRANSISTOR	获取价格
2N5401YBU	ONSEMI	High Current PNP Bipolar Transistor, TO-92	获取价格
2N5401YTA	ONSEMI	High Current PNP Bipolar Transistor, TO-92	获取价格
2N5401ZL1	ONSEMI	Amplifier Transistors	获取价格
2N5401ZL1G	ONSEMI	Amplifier Transistors PNP Silicon	获取价格
2N5404	SEME-LAB	SMALL SIGNAL PNP TRANSISTORS IN TO-5	获取价格