生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.35 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-5 |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 1 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 60 MHz |
VCEsat-Max: | 0.6 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5407L | ETC |
获取价格 |
PNP | |
2N5407X | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-39 | |
2N5408 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-111, Metal, 4 | |
2N5409 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111 | |
2N540A | NJSEMI |
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PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTOR | |
2N541 | NJSEMI |
获取价格 |
TRANSITRON | |
2N5410 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-111, Metal, 4 | |
2N5411 | APITECH |
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Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-111, Metal, | |
2N5412 | MICROSEMI |
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Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 | |
2N5412E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 |