生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-D3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.55 | 最大集电极电流 (IC): | 70 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | JEDEC-95代码: | TO-114 |
JESD-30 代码: | O-MUPM-D3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 350 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10 MHz |
VCEsat-Max: | 1.8 V |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5251 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 90A I(C) | STR-1/2 | |
2N5252 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | |
2N5253 | SEME-LAB |
获取价格 |
BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE | |
2N5255 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N5256 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N525A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 | |
2N526 | NJSEMI |
获取价格 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency | |
2N5260 | ETC |
获取价格 |
TRIAC|1KV V(DRM)|200A I(T)RMS|TO-209AB | |
2N5262 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N5262 | NJSEMI |
获取价格 |
BJT |