生命周期: | Active | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.54 |
Is Samacsys: | N | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 300 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 80 | JEDEC-95代码: | TO-205AD |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 30 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5255 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N5256 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS | |
2N525A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 | |
2N526 | NJSEMI |
获取价格 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency | |
2N5260 | ETC |
获取价格 |
TRIAC|1KV V(DRM)|200A I(T)RMS|TO-209AB | |
2N5262 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N5262 | NJSEMI |
获取价格 |
BJT | |
2N5262LEADFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N5262PBFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, | |
2N5262TIN/LEAD | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, |