生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 80 |
JEDEC-95代码: | TO-205AD | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 30 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5255 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
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2N5256 | ETC |
获取价格 |
SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS |
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2N525A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 |
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2N526 | NJSEMI |
获取价格 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency |
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2N5260 | ETC |
获取价格 |
TRIAC|1KV V(DRM)|200A I(T)RMS|TO-209AB |
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2N5262 | CENTRAL |
获取价格 |
Small Signal Transistors |
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2N5262 | NJSEMI |
获取价格 |
BJT |
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2N5262LEADFREE | CENTRAL |
获取价格 |
暂无描述 |
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2N5262PBFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, |
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2N5262TIN/LEAD | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, |
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