5秒后页面跳转
2N5237S PDF预览

2N5237S

更新时间: 2024-11-08 22:45:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关
页数 文件大小 规格书
3页 69K
描述
NPN POWER SILICON TRANSISTOR

2N5237S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.14
最大集电极电流 (IC):10 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-205ADJESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

2N5237S 数据手册

 浏览型号2N5237S的Datasheet PDF文件第2页浏览型号2N5237S的Datasheet PDF文件第3页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 394  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N4150  
2N4150S  
2N5237  
2N5237S  
2N5238  
2N5238S  
MAXIMUM RATINGS  
2N4150 2N5237 2N5238  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol 2N4150S2N5237S2N5238S Unit  
70  
120  
150  
10  
170  
Vdc  
Vdc  
Vdc  
Adc  
VCEO  
VCBO  
VEBO  
IC  
100  
200  
TO- 5*  
2N4150, 2N5237,  
2N5238  
10  
Total Power Dissipation @ TA = +250C(1)  
1.0  
5.0  
W
0C  
PT  
@ TC = +1000C(2)  
Operating & Storage Junction Temp. Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
Thermal Resistance, Junction-to-Case  
0.020  
R
qJC  
qJA  
0C/mW  
TO-39*  
(TO-205AD)  
2N4150S, 2N5237S,  
2N5238S  
Junction-to-Ambient  
0.175  
R
1) Derate linearly @ 5.7 mW/0C for TA > +250C  
2) Derate linearly @ 50 mW/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Emitter-Base Breakdown Voltage  
IE = 10 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
7.0  
V(BR)  
EBO  
Collector-Emitter Breakdown Voltage  
IC = 0.1 Adc  
70  
120  
170  
2N4150, 2N4150S  
2N5237, 2N5237S  
2N5238, 2N5238S  
V(BR)  
CEO  
Vdc  
Collector-Emitter Cutoff Current  
VEB = 0.5 Vdc, VCE = 60 Vdc  
VEB = 0.5 Vdc, VCE = 110 Vdc  
VEB = 0.5 Vdc, VCE = 160 Vdc  
10  
10  
10  
mAdc  
2N4150, 2N4150S  
2N5237, 2N5237S  
2N5238, 2N5238S  
ICEX  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

与2N5237S相关器件

型号 品牌 获取价格 描述 数据表
2N5237SE3 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-205A
2N5238 SEMICOA

获取价格

Type 2N5238 Geometry 3111 Polarity NPN
2N5238 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
2N5238 NJSEMI

获取价格

NPN TO-39/TO-5
2N5238_02 SEMICOA

获取价格

Silicon NPN Transistor
2N5238E3 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 10A I(C), 170V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, T
2N5238S MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
2N5238S NJSEMI

获取价格

NPN POWER SILICON TRANSISTOR
2N5238SE3 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 10A I(C), 170V V(BR)CEO, 1-Element, NPN, Silicon, TO-205A
2N5239 NJSEMI

获取价格

HIGH-VOLTAGE, SILICON N-P-N TRANSISTORS