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2N5238 PDF预览

2N5238

更新时间: 2024-09-16 22:45:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
3页 69K
描述
NPN POWER SILICON TRANSISTOR

2N5238 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-5
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.16
Is Samacsys:N最大集电极电流 (IC):10 A
集电极-发射极最大电压:170 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-5
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):2000 ns最大开启时间(吨):550 ns
Base Number Matches:1

2N5238 数据手册

 浏览型号2N5238的Datasheet PDF文件第2页浏览型号2N5238的Datasheet PDF文件第3页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 394  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N4150  
2N4150S  
2N5237  
2N5237S  
2N5238  
2N5238S  
MAXIMUM RATINGS  
2N4150 2N5237 2N5238  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol 2N4150S2N5237S2N5238S Unit  
70  
120  
150  
10  
170  
Vdc  
Vdc  
Vdc  
Adc  
VCEO  
VCBO  
VEBO  
IC  
100  
200  
TO- 5*  
2N4150, 2N5237,  
2N5238  
10  
Total Power Dissipation @ TA = +250C(1)  
1.0  
5.0  
W
0C  
PT  
@ TC = +1000C(2)  
Operating & Storage Junction Temp. Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
Thermal Resistance, Junction-to-Case  
0.020  
R
qJC  
qJA  
0C/mW  
TO-39*  
(TO-205AD)  
2N4150S, 2N5237S,  
2N5238S  
Junction-to-Ambient  
0.175  
R
1) Derate linearly @ 5.7 mW/0C for TA > +250C  
2) Derate linearly @ 50 mW/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Emitter-Base Breakdown Voltage  
IE = 10 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
7.0  
V(BR)  
EBO  
Collector-Emitter Breakdown Voltage  
IC = 0.1 Adc  
70  
120  
170  
2N4150, 2N4150S  
2N5237, 2N5237S  
2N5238, 2N5238S  
V(BR)  
CEO  
Vdc  
Collector-Emitter Cutoff Current  
VEB = 0.5 Vdc, VCE = 60 Vdc  
VEB = 0.5 Vdc, VCE = 110 Vdc  
VEB = 0.5 Vdc, VCE = 160 Vdc  
10  
10  
10  
mAdc  
2N4150, 2N4150S  
2N5237, 2N5237S  
2N5238, 2N5238S  
ICEX  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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