Datasheet > 2N5238E3

2N5238E3

更新时间： 2024-11-08 05:58:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	100K
描述
Small Signal Bipolar Transistor, 10A I(C), 170V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

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2N5238E3 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/394

DEVICES

LEVELS

JAN

JANTX

JANTXV

JANS

2N4150

2N4150S

2N5237

2N5237S

2N5238

2N5238S

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

2N4150

2N5237

2N5238

Parameters / Test Conditions

Symbol

Unit

2N4150S 2N5237S 2N5238S

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

I_C

120

150

170

200

Vdc

Adc

Collector-Base Voltage

Emitter-Base Voltage

100

Collector Current

Total Power Dissipation

@ T_A= +25°C ⁽¹⁾

@ T_C= +25°C ⁽²⁾

1.0

P_T

Operating & Storage Junction Temperature Range

T_j, T_stg

-65 to +200

°C

TO-5

Thermal Resistance, Junction-to Case

Junction- to Ambient

R_θJC

R_θJA

175

°C/W

2N4150, 2N5237, 2N5238

1) Derate linearly @ 5.7mW/°C for T_A> +25°C

2) Derate linearly @ 100mW/°C for T_C> +25°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERISTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 0.1mAdc

120

170

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

V_(BR)CEO

Vdc

Collector-Emitter Cutoff Current

V_BE= 0.5Vdc, V_CE= 60Vdc

V_BE= 0.5Vdc, V_CE= 110Vdc

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

I_CEX

µAdc

V_BE= 0.5Vdc, V_CE= 160Vdc

TO-39

(TO-205AD)

2N4150S, 2N5237S, 2N5238S

Collector-Emitter Cutoff Current

V_CE= 60Vdc

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

I_CEO

µAdc

V_CE= 110Vdc

V_CE= 160Vdc

Emitter-Base Cutoff Current

V_EB= 7.0Vdc

0.1

I_EBO

V_EB= 5.0Vdc

T4-LDS-0014 Rev. 4 (082192)

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