Datasheet > 2N5239

2N5239

更新时间： 2024-11-07 06:18:07

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	110K
描述
Silicon NPN Power Transistors

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中文翻译

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2N5239 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5239

DESCRIPTION

·With TO-3 package

·High breakdown voltage

·High power dissipation

APPLICATIONS

·Switching regulator

·Inverters

·Power amplifiers

·Deflection circuits

·High-voltage bridge amplifiers

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

MAXIMUN RATINGS(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

300

225

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

I_B

Base current

P_T

Total power dissipation

Junction temperature

Storage temperature

T_c=25ꢀ

100

200

-65~200

ꢀ

T_j

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.75

ꢀ/W

12 3

中文翻译

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