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2N4261 PDF预览

2N4261

更新时间: 2024-11-08 22:45:03
品牌 Logo 应用领域
SEMICOA 晶体晶体管
页数 文件大小 规格书
2页 49K
描述
Type 2N4261 Geometry 0014 Polarity PNP

2N4261 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-72
包装说明:CYLINDRICAL, O-MBCY-W4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.06
Is Samacsys:N最大集电极电流 (IC):0.03 A
基于收集器的最大容量:2.5 pF集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-72JESD-30 代码:O-MBCY-W4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):2000 MHz
Base Number Matches:1

2N4261 数据手册

 浏览型号2N4261的Datasheet PDF文件第2页 
Data Sheet No. 2N4261  
Ge ne ric Pa rt Numbe r:  
2N4261  
Type 2N4261  
Geometry 0014  
Polarity PNP  
REF: MIL-PRF-19500/511  
Qual Level: JAN - JANS  
Features:  
·
Fast switching small signal silicon  
transistor.  
·
·
Housed in a TO-72 case.  
Also available in chip form using  
the 0014 chip geometry.  
·
·
The Min and Max limits shown are  
per MIL-PRF-19500/511 which  
Semicoa meets in all cases.  
Radiation graphs available.  
TO-72  
Maximum Ratings  
TC = 25oC unless otherwise specified  
Rating  
Symbol  
Rating  
Unit  
VCEO  
Collector-Emitter Voltage  
15  
V
VCBO  
VEBO  
IC  
Collector-Base Voltage  
15  
4.5  
V
V
Emitter-Base Voltage  
Collector Current, Continuous  
Operating Junction Temperature  
Storage Temperature  
30  
mA  
oC  
oC  
TJ  
-65 to +200  
-65 to +200  
TSTG  

2N4261 替代型号

型号 品牌 替代类型 描述 数据表
2N4261 MICROSEMI

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